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Ordering number : ENN8959
MCH6644
N-Channel and P-Channel Silicon MOSFETs
MCH6644
Features
*
General-Purpose Switching Device Applications
* * *
The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting. Excellent ON-resistance characteristic. Best suited for load switches. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 20 1.8 7.2 0.8 150 --55 to +150 P-channel -30 20 --1.2 --4.8 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 30 1 10 1.2 0.78 1.3 160 300 95 22 16 210 420 2.6 V A A V S m m pF pF pF Symbol Conditions Ratings min typ max Unit
Marking : WU
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1405PE MS IM TB-00001813 No.8959-1/6
MCH6644
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-0.6A ID=--0.6A, VGS=-10V ID=--0.3A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--1.2A VDS=--10V, VGS=-10V, ID=--1.2A VDS=--10V, VGS=-10V, ID=--1.2A IS=--1.2A, VGS=0V --1.2 0.6 1.0 320 590 104 22 17 12.5 24 12 12.2 3.3 0.48 0.45 --0.91 --1.5 420 830 --30 --1 10 --2.6 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0V Ratings min typ 6.2 4.5 13 6.4 3.2 0.74 0.42 0.93 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions unit : mm 7022-006
Bottom View 0.25 0.3 0.15
Electrical Connection
6
5
4
4
2.1 1.6
5
6
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1
Top view
1
0.25 0.07
2
3
3
0.65
2
1
2.0
6
5
4
0.85
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
123 Top View
No.8959-2/6
MCH6644
Switching Time Test Circuit
[N-channel]
VIN 10V 0V VIN ID=1A RL=15 VDD=15V 0V --10V VIN ID= --0.6A RL=25
[P-channel]
VIN VDD= --15V
D
PW=10s D.C.1%
VOUT
D
PW=10s D.C.1%
VOUT
G
G
P.G
50
S
P.G
50
S
1.8
ID -- VDS
V
V
[Nch]
--1.2
ID -- VDS
.0V
.0V
--1 0
[Pch]
6.0
4.0
1.6 1.4
10.0
--6
--1.0
Drain Current, ID -- A
Drain Current, ID -- A
3.5
V
--0.8
--3.0V
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
--0.6
3.0V
--0.4
--4
.0V
V
VGS= --2.5V
VGS=2.5V
--0.2
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V
2.0
IT07277
Drain-to-Source Voltage, VDS -- V
--2.0
IT07278
ID -- VGS
Ta= --25 C 75 C
VDS=10V
[Nch]
C
ID -- VGS
VDS= --10V
[Pch]
Ta= --25 C 75 C
25
--1.5 --2.0
25
1.8 1.6
--1.8 --1.6
Drain Current, ID -- A
Drain Current, ID -- A
1.4 1.2 1.0 0.8
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
5C
0.6 0.4 0.2 0 0 0.5 1.0 1.5
C --25 C
75
2.0
2.5
3.0
3.5
4.0
4.5
0
--0.5
--1.0
75 C --25 C
Ta= 2
Ta =
C
--2.5
--3.0
--3.5
--4.0
Gate-to-Source Voltage, VGS -- V
IT07279
Gate-to-Source Voltage, VGS -- V
IT07280
No.8959-3/6
25 C
--4.5
MCH6644
700
RDS(on) -- VGS
[Nch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
1200
RDS(on) -- VGS
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
600
1000
500
800
400
1.0A
300
600
--600mA
ID=0.5A
400
ID= --300mA
200
100 0 0 2 4 6 8 10 12 14 16 18 20
200
0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V
500
IT10205
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
1200
IT07282
[Nch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160
1000
0.5A I D=
=4V , VGS
800
.0 I D=1
=10V A, VGS
600
A 300m I D= --
= --4V , VGS
400
I D= --600
= mA, V GS
--10V
200
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
5
yfs -- ID
IT10206
Ambient Temperature, Ta -- C
5
[Nch]
Forward Transfer Admittance, yfs -- S
yfs -- ID
IT07284
[Pch] VDS= --10V
Forward Transfer Admittance, yfs -- S
VDS=10V
3 2
3 2
1.0 7 5 3 2
25
-2 =-
C
1.0 7 5 3 2
C 5
Ta
7
5C
= Ta
--2
C 25 5C
C 75
0.1 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Drain Current, ID -- A
5 3 2
IT07285
IS -- VSD
Drain Current, ID -- A
3 2 --1.0
IT07286
[Nch] VGS=0V
IS -- VSD
[Pch] VGS=0V
Source Current, IS -- A
1.0 7 5
Source Current, IS -- A
7 5 3 2 --0.1 7 5 3 2
5C 25 C
0.1 7 5 3 2 0.01 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
--0.01 --0.4
--0.5
--0.6
Ta= 7
2
--25 C
3
5C 25 C --25 C
--0.7 --0.8 --0.9
Ta= 7
--1.0
--1.1
--1.2
Diode Forward Voltage, VSD -- V
IT07287
Diode Forward Voltage, VSD -- V
IT07288
No.8959-4/6
MCH6644
3 2
SW Time -- ID
[Nch] VDD=15V VGS=10V Switching Time, SW Time -- ns
3 2
SW Time -- ID
[Pch] VDD= --15V VGS= --10V
Switching Time, SW Time -- ns
100 7 5 3 2 10 7 5 3 2
100 7 5 3 2
td(off)
td(on)
tf
tf
td(on)
10 7 5 3
td(off)
tr
tr
1.0 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
2 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3 2
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT07289
[Nch] f=1MHz
3 2
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT07290
[Pch] f=1MHz
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
100 7 5
Ciss
100 7 5
Ciss
3 2
3 2
Coss
Crss
Coss
Crss
10 0 5 10 15 20 25 30 IT07291
10 0 --5 --10 --15 --20 --25 --30 IT07292
Drain-to-Source Voltage, VDS -- V
10 9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
--10 --9
[Nch]
VGS -- Qg
[Pch]
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07293
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=1.8A
VDS= --10V ID= --1.2A
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07294
Total Gate Charge, Qg -- nC
10 7 5 3 2
Total Gate Charge, Qg -- nC
7 5 3 2
ASO
IDP=7.2A
[Nch] <10s
ASO
IDP= --4.8A
[Pch] <10s
ID=1.8A
10 1m 0 ss
10
Drain Current, ID -- A
Drain Current, ID -- A
ID= --1.2A
10 0 1m s s
10 m s
m s
1.0 7 5 3 2 0.1 7 5 3 2
--1.0 7 5 3 2 --0.1 7 5 3 2
10 0m s
n io at er op D C
10 0m s
er ati on DC op
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 0.1 23 5 7 1.0 23 5 7 10 2 3 5
Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
3 5 7--0.1 23 5 7--1.0 23 5 7 --10 2 3 5
0.01 0.01
--0.01 --0.01 2
Drain-to-Source Voltage, VDS -- V
IT10208
Drain-to-Source Voltage, VDS -- V
IT10207
No.8959-5/6
MCH6644
1.0
PD -- Ta
[Nch / Pch]
Allowable Power Dissipation, PD -- W
0.8
M
ou
nte
do
0.6
na
ce
ram
ic
bo
0.4
ard
(90
0m
m2 !0
0.2
.8m
m)
1u
nit
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT07297
Note on usage : Since the MCH6644 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2005. Specifications and information herein are subject to change without notice.
PS No.8959-6/6

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